Crystal-melt interface near grain boundaries during growth of shaped silicon crystals-Reference-Cited by-同舟云学术

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Crystal-melt interface near grain boundaries during growth of shaped silicon crystals

Published:1997-02 Issue:1-2 Volume:172 Page:115-119
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Katz E.A.,Polyak L.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Silicon Processing for Photovoltaic II;Kalejs,1987

2. Crystal Growth. Properties and Applications, Vol. 5, Silicon;Wald,1981

3. Grain boundary structure and electrical activity in shaped silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon;Journal of Crystal Growth;2024-08

2. Two-dimensional numerical modeling of grain structure in multi-crystalline silicon ingot;Journal of Crystal Growth;2014-01

3. The grain–grain–liquid triple phase line during solidification of multi-crystalline silicon;Comptes Rendus Physique;2013-02

4. On the twinning occurrence in bulk semiconductor crystal growth;Scripta Materialia;2010-06

5. IBIC Studies of structural defect activity in different polycrystalline silicon material;Vacuum;2003-05

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