Influence of step motion on hillock formation in CdTe(100) grown on GaAs(100) by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Influence of step motion on hillock formation in CdTe(100) grown on GaAs(100) by metalorganic vapor phase epitaxy

Published:1997-04 Issue:3-4 Volume:173 Page:330-335
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nishino Hironori,Nishijima Yoshito

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Growth of uniform HgCdTe by metalorganic chemical vapor deposition system

2. Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays

3. Influence of Ga‐As‐Te interfacial phases on the orientation of epitaxial CdTe on GaAs

4. Orientation dependance of arsenic incorporation in metalorganic chemical-vapor deposition-grown HgCdTe

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