Photoluminescence study of multiple quantum wells grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Photoluminescence in short-period Si/Ge strained-layer superlattices
2. Spatially indirect radiative recombination of carriers localized in Si1−x−yGexCy/Si1−yCy double quantum well structure on Si substrates
3. Electronic and optical properties of ultrathin Si/Ge (001) superlattices
4. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
5. Photoluminescence of Si1-xGex/Si Quantum Well Structures
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1. Low-dimensional materials for thermoelectric applications;International Journal of Nanotechnology;2012
2. Room temperature electroluminescence from multilayer GeSi heterostructures;physica status solidi (a);2006-05
3. Temperature and excitation power dependencies of the photoluminescence of planar and vertically self-organized Si0.70Ge0.30/Si strained superlattices;Thin Solid Films;2000-12
4. Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers;Thin Solid Films;1998-05
5. Low-temperature molecular beam epitaxy of Si1−x−yGexCy/Si quantum well structures: electrical and optical properties;Thin Solid Films;1998-05
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