Determination of beryllium and self-interstitial diffusion parameters in InGaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability
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1. Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study;Acta Materialia;2017-02
2. Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy;Journal of Alloys and Compounds;2010-07
3. Beryllium doping of GaAs and GaAsN studied from first principles;Physical Review B;2009-03-20
4. Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs;physica status solidi (b);2006-10
5. Diffusion of dopants in highly (∼10[sup 20] cm[sup −3]) n- and p-doped GaSb-based materials;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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