Stranski–Krastanov growth mode in Ge/Si(001) self-assembled quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Structural properties of heteroepitaxial Ge films on a Si(100)‐2×1 surface
2. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.
3. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
4. GaAs equilibrium crystal shape from first principles
5. Relaxation model of coherent island formation in heteroepitaxial thin films
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