Homoepitaxial mesa structures on 4H–SiC (0001) and substrates by chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. SiC power devices for high voltage applications
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1. Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas;Nano Letters;2012-03-07
2. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition;Springer Handbook of Crystal Growth;2010
3. Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112¯0);Journal of Crystal Growth;2008-12
4. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $$ {\hbox{11}}\overline{{\hbox{2}}} {\hbox{0}} $$ ]- and [0001]-Oriented Silicon Carbide Substrates;Journal of Electronic Materials;2007-03-16
5. Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts;Diamond and Related Materials;2007-01
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