Effect of phosphorus doping on the structural properties in nc-Si:H thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Single-electron charging and periodic conductance resonances in GaAs nanostructures
2. Development of highly conductiven‐type μc‐Si:H films at low power for device applications
3. Highly conductive and highly transparent n-type microcrystalline silicon thin films
4. Electronic conductivity of hydrogenated nanocrystalline silicon films
5. Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering
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1. Growth of crystalline silicon by a seed layer approach using plasma enhanced chemical vapor deposition;Physica B: Condensed Matter;2021-05
2. Role of Deposition Pressure on Properties of Phosphorus Doped Hydrogenated Nano-Crystalline Silicon (nc-Si:H) Thin Films Prepared by the Cat-CVD Method;Recent Innovations in Chemical Engineering (Formerly Recent Patents on Chemical Engineering);2021-02
3. Structural evolution of nanocrystalline silicon in hydrogenated nanocrystalline silicon solar cells;Surface and Coatings Technology;2017-06
4. Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap;AIP Advances;2016-10
5. Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers;Nanoscale Research Letters;2016-07-26
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