In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)Boriented GaAs substrates
2. Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio
3. LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors
4. Performance comparison of metalorganic vapor phase epitaxy grown C-doped GaAs/AlGaAs heterojunction bipolar transistor wafers between AsH3 and trimethylarsenic for the base layer growth
5. High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devices
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1. Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE;Journal of Electronic Materials;2023-06-27
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3. Reduction in residual impurities in semi-polar 303¯1¯ and 202¯1¯ GaN grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2019-04
4. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
5. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy;Materials Research Express;2016-07-15
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