Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. A Study of Silicon Incorporation in GaAs MOCVD Layers
2. Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
3. Crystallographic orientation dependence of impurity incorporation into III‐V compound semiconductors grown by metalorganic vapor phase epitaxy
4. The effects of substrate misorientation on silicon doping efficiency in MOVPE grown GaAs
5. Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
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1. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As HEMT nanoheterostructures;Semiconductors;2014-01
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