Crystallographic orientation dependence of impurity incorporation into III‐V compound semiconductors grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357769
Reference71 articles.
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5. High‐power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy
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