Electrical activation of Te and Se in GaAs at extremely heavy doping up to 5×1020cm−3 prepared by intermittent injection of TEG/AsH3 in ultra-high vacuum-Reference-Cited by-同舟云学术

Electrical activation of Te and Se in GaAs at extremely heavy doping up to 5×1020cm−3 prepared by intermittent injection of TEG/AsH3 in ultra-high vacuum

Published:2000-05 Issue:3-4 Volume:212 Page:402-410
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oyama Yutaka,Nishizawa Jun-ichi,Seo Kohichi,Suto Ken

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

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4. On the Reaction Mechanism of GaAs MOCVD

5. Doping in Molecular Layer Epitaxy

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