Doping in Molecular Layer Epitaxy-Reference-Cited by-同舟云学术

Doping in Molecular Layer Epitaxy

Published:1989-02-01 Issue:2 Volume:136 Page:478-484
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishizawa Jun‐ichi¹²,Abe Hitoshi¹²,Kurabayashi Toru¹²

Affiliation:

1. Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan and Exploratory Research for Advanced Technology, Nishizawa Perfect Crystal Project, Research Development Corporation of Japan, c/o Semiconductor Research Institute, Kawauchi, Sendai 980, Japan

2. Exploratory Research for Advanced Technology, Nishizawa Perfect Crystal Project, Research Development Corporation of Japan, c/o Semiconductor Research Institute, Kawauchi, Sendai 980, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096658/pdf

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