(AlGa)As composition profile analysis of trenches overgrown with MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. 600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure
2. The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates
3. Composition profile of an AlGaAs epilayer on a V‐grooved substrate grown by low‐pressure metalorganic vapor phase epitaxy
4. Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975nm DFB-BA diode lasers;Journal of Crystal Growth;2013-05
2. Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes;Journal of Crystal Growth;2011-01
3. Buried selectively oxidized AlGaAs structures grown on nonplanar substrates;IEEE Photonics Technology Letters;2003-01
4. Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates;Optics Express;2002-09-23
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