Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. 600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure
2. Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure
3. A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substrates
4. Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Kinetic influences on void formation in epitaxially regrown GaAs-Based PCSELs;Journal of Crystal Growth;2023-01
2. (AlGa)As composition profile analysis of trenches overgrown with MOVPE;Journal of Crystal Growth;2001-01
3. Comparison of binary and ternary growth over trenches using MOVPE;Journal of Crystal Growth;2000-06
4. Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy;Journal of Crystal Growth;1999-11
5. MOVPE growth of tunable DBR laser diode emitting at 1060nm;Journal of Crystal Growth;1998-12
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