Kinetic study of P and As desorption from binary and ternary III–V semiconductors surface by in situ ellipsometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy
2. Alloying mechanisms in MOVPE GaAs1-xPx
3. Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy
4. Effects of growth temperature and ratio on surface structure and ordering in Ga0.5In0.5P
5. Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption
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1. From diffusion limited to incorporation limited growth of nanowires;Journal of Crystal Growth;2019-11
2. Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics;Journal of Crystal Growth;2008-06
3. X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effects;2008 20th International Conference on Indium Phosphide and Related Materials;2008-05
4. Desorption Time of As Adsorbed on GaInAs Surface Analyzed by X-ray CTR Scattering;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
5. Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in theInAs∕InP(001)system: Experiment and theory;Physical Review B;2006-12-07
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