Growth and characterization of ZnSe on Si by atomic layer epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy
2. Incorporation processes in MBE growth of ZnSe
3. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
4. Oxide interfacial layer in Au ohmic contacts to p-type ZnSe
5. Interface barrier height in ZnSe/GaAs structures
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