The effect of N+-implanted Si(111) substrate and buffer layer on GaN films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Progress and prospects for GaN and the III–V nitride semiconductors
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates
4. Ultraviolet and violet GaN light emitting diodes on silicon
5. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
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2. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017
3. Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2013
4. In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates;Journal of Electronic Materials;2011-12-16
5. Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
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