Growth and doping of GaAs and AlGaAs layers by low-temperature liquid-phase epitaxy-Reference-Cited by-同舟云学术

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Growth and doping of GaAs and AlGaAs layers by low-temperature liquid-phase epitaxy

Published:2000-10 Issue:3 Volume:219 Page:193-198
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Milanova M,Khvostikov V

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. 23rd International Symposium on Compound Semiconductors;Andreev,1996

2. V.M. Andreev, V.P. Khvostikov, E.V. Paleeva et al., Proceedings of the 25th IEEE PVSEC, Washington, 1996.

3. Spectral characteristics of GaAs solar cells grown by LPE

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