Active control of the electrical properties of semi-insulating GaAs-Reference-Cited by-同舟云学术

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Active control of the electrical properties of semi-insulating GaAs

Published:1997-04 Issue:1-4 Volume:174 Page:208-212
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Higgins W.M.,Ware R.M.,Tiernan M.S.,O'Hearn K.J.,Carlson D.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Semi-insulating III–V Materials, Malmo;Pearah,1988

2. Semi-insulating III–V Materials, Toronto, Canada;Sato,1990

3. Carbon in semi‐insulating, liquid encapsulated Czochralski GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals;Crystal Research and Technology;2000-10

2. A Study on Carbon Incorporation in Semi-Insulating GaAs Crystals Grown by the Vapor Pressure Controlled Czochralski Technique (VCz) Part I: Experiments and Results;Crystal Research and Technology;2000-10

3. Point Defects in III-V Compound Semiconductors;Defect and Diffusion Forum;2000-08

4. Semi-insulating GaAs grown in outer space;Materials Science and Engineering: B;2000-06

5. Incorporation of Carbon by VGF-Growth of GaAs;Crystal Research and Technology;1999-02

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