p-Type doping with arsenic in (2 1 1)B HgCdTe grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. The minority carrier lifetime in doped and undoped p-type Hg0.78Cd0.22Te liquid phase epitaxy films
2. Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy
3. Properties and applications of CdTe/sapphire epilayers grown by molecular beam epitaxy
4. p‐on‐nheterojunctions of (Hg,Cd)Te by molecular‐beam epitaxy: Controlled silver doping and compositional grading
5. The doping of mercury cadmium telluride grown by molecular‐beam epitaxy
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1. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors;Applied Physics Reviews;2015-12
2. Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?;Journal of Electronic Materials;2013-09-25
3. MBE Growth of Mercury Cadmium Telluride;Mercury Cadmium Telluride;2010-09-04
4. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010
5. Studies of Hg[sub (1-x)]Cd[sub x]Te Formation by Electrochemical Atomic Layer Deposition and Investigations into Bandgap Engineering;Journal of The Electrochemical Society;2007
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