The minority carrier lifetime in doped and undoped p-type Hg0.78Cd0.22Te liquid phase epitaxy films-Reference-Cited by-同舟云学术

The minority carrier lifetime in doped and undoped p-type Hg0.78Cd0.22Te liquid phase epitaxy films

Published:1995-05 Issue:5 Volume:24 Page:539-544
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Chen M. C.,Colombo L.,Dodge J. A.,Tregilgas J. H.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657960.pdf

Reference20 articles.

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3. J.S. Chen, J. Bajaj, W.E. Tennant, D.S. Lo, M. Brown and G. Bostrup,Mat. Res. Soc. Symp. Proc. V90, (Pittsburgh, PA: Mater. Res. Soc, 1987), p. 287.

4. T. Tung, M.H. Kalisher, A.P. Stevens and P.E. Herning,Mat. Res. Soc. Symp. Proc. V90, (Pittsburgh, PA: Mater. Res. Soc, 1987), p. 321.

5. D.E. Lacklison and P. Capper,Semicond. Sci. Technol. 2, 33 (1987).

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