In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogen
2. Selective-area epitaxy of GaAs using a GaN mask in in-situ processes
3. In-Situ STM Observation of GaAs Surfaces after Nitridation
4. Reactive N+2 ion bombardment of GaAs{110}: A method for GaN thin film growth
5. NH3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photovoltaic effects on Franz–Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs∕n-type GaAs epitaxial layer structures;Journal of Applied Physics;2005-03-15
2. Molecular beam epitaxy growth of GaN, AlN and InN;Progress in Crystal Growth and Characterization of Materials;2004-01
3. Substrates for gallium nitride epitaxy;Materials Science and Engineering: R: Reports;2002-04
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