Photovoltaic effects on Franz–Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs∕n-type GaAs epitaxial layer structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1861968
Reference51 articles.
1. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
2. Franz–Keldysh oscillations in modulation spectroscopy
3. Photoreflectance study of surface Fermi level in GaAs and GaAlAs
4. In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n- and p-type GaAs surfaces
5. Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces
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1. Characterization of surface electric field in β-FeSi2 by Franz–Keldysh oscillations;Journal of Applied Physics;2024-05-28
2. Nondestructive and Quantitative Evaluation of a GaAs Epitaxial Layer Covered With a Silicon Nitride Insulating Thin Film After a Highly Accelerated Temperature and Humidity Stress With the Use of Photoreflectance Spectroscopy;IEEE Transactions on Device and Materials Reliability;2023-03
3. Decay time extension of terahertz electromagnetic waves emitted from coherent longitudinal optical phonons in GaAs epitaxial layers with the use of fast atom bombardment;Optics Continuum;2022-10-14
4. Collection of photocarriers in intermediate band solar cells: experiments and equivalent circuit analysis;Journal of Photonics for Energy;2022-07-01
5. Simple and direct estimation method for split-off hole effective mass from Franz–Keldysh oscillations appearing in photoreflectance spectra: a feasibility study using GaAs epitaxial layer structures at room temperature;Semiconductor Science and Technology;2021-09-03
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