Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces-Reference-Cited by-同舟云学术

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Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces

Published:1998-07 Issue:3 Volume:191 Page:413-420
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hahn Seung-Ho,Tsukada Takao,Hozawa Mitsunori,Maruyama Shigenao,Imaishi Nobuyuki,Kitagawa Sadao

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Global heat transfer model for Czochralski crystal growth based on diffuse-gray radiation

2. Global modelling of heat transfer in crystal growth furnaces

3. Minimization of thermoelastic stresses in Czochralski grown silicon: application of the integrated system model

4. Numerical simulation of molten silicon flow; comparison with experiment

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Heat Transfer Analysis in a Semitransparent Single Crystal with Specular Surfaces: Application of REM2;Numerical Heat Transfer, Part A: Applications;2012-11-20

2. Study on release rate of latent heat in Czochralski silicon growth;Rare Metals;2006-12

3. Recent progress of crystal growth modeling and growth control;Chemical Engineering Science;2004-04

4. A continuous Czochralski silicon crystal growth system;Journal of Crystal Growth;2003-03

5. Gas flow effect on global heat transport and melt convection in Czochralski silicon growth;Journal of Crystal Growth;2003-02

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