Characteristics of Mg-doped GaN epilayers grown with the variation of Mg incorporation-Reference-Cited by-同舟云学术

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Characteristics of Mg-doped GaN epilayers grown with the variation of Mg incorporation

Published:1998-10 Issue:3 Volume:193 Page:300-304
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Cheul-Ro,Leem Jae-Young,Noh Sam-Kyu,Park Seong-Eun,Lee Ju-In,Kim Chang-Soo,Son Sung-Jin,Leem Ki-Young

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition

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1. Self‐Assembled Nanowrinkle‐Network‐Structured Transparent Conductive Zinc Oxide for High‐Efficiency Inorganic Light‐Emitting Diodes;Advanced Materials Interfaces;2021-12-10

2. Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers;Optik;2019-09

3. Epitaxial growth and characterization of non-polara-plane AlGaN films with MgN/AlGaN insertion layers;Journal of Physics: Conference Series;2017-06

4. Epitaxial growth and characterization of nonpolara-plane AlGaN films with MgN/AlGaN insertion layers;Applied Physics Express;2017-03-29

5. Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers;Superlattices and Microstructures;2016-10

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