The effects of arsenic pressure on the properties of In1−x−yGaxAlyAs layers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. 4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching
2. Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As
3. MBE grown strain-compensated AlGaInAs/AlGaInAs/InP MQW laser structures
4. Molecular beam epitaxy growth and characterization of InGaAlAs-collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdown
5. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Photoluminescence study of InGaAs/AlAsSb heterostructure;Journal of Applied Physics;2001-01-15
2. Intersubband absorption from InGaAlAs/InAlAs multiple quantum-well structures grown by molecular-beam epitaxy;Applied Physics Letters;2000-06-12
3. InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection;SPIE Proceedings;1999-11-09
4. Electrical and optical characteristics of molecular beam epitaxial Be-doped In0.53Ga0.26Al0.21As layers grown lattice-matched on InP (100) substrates;Materials Science and Engineering: B;1999-06
5. The effects of beryllium doping in InGaAlAs layers grown by molecular beam epitaxy;Journal of Crystal Growth;1998-10
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