Morphology and semiconducting properties of homoepitaxially grown phosphorus-doped (100) and (111) diamond films by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source-Reference-Cited by-同舟云学术

Morphology and semiconducting properties of homoepitaxially grown phosphorus-doped (100) and (111) diamond films by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Published:1998-08 Issue:4 Volume:191 Page:723-733
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saito Takeyasu,Kameta Masanori,Kusakabe Katsuki,Morooka Shigeharu,Maeda Hideaki,Hayashi Yasunori,Asano Tanemasa,Kawahara Akihiko

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Properties of Diamond;Field,1979

2. Synthetic Diamond: Emerging CVD Science and Technology;Spear,1993

3. Characterization of conducting diamond films

4. Activation of boron-dopant atoms in ion-implanted diamonds

5. Theory of impurities in diamond

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1. Effects of Vacancy and Hydrogen on the Growth and Morphology of N-Type Phosphorus-Doped Diamond Surfaces;Applied Sciences;2021-02-22

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3. n-type conductivity of phosphorus-doped homoepitaxial single crystal diamond on (001) substrate;Diamond and Related Materials;2005-11

4. Growth and characterization of P-doped CVD diamond (111) thin films homoepitaxially grown using trimethylphosphine;Applied Surface Science;2005-05

5. Facet-Selective Growth Rates of Doped Diamond Crystals Prepared by Microwave Plasma-Assisted Chemical Vapor Deposition.;JOURNAL OF CHEMICAL ENGINEERING OF JAPAN;2002