Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD-Reference-Cited by-同舟云学术

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Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD

Published:1998-12 Issue:3-4 Volume:194 Page:301-308
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Constantino M.E.,Vidal M.A.,Salazar-Hernández B.,Navarro-Contreras H.,López-López M.,Meléndez M.,Hernández-Calderon I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Blue‐green laser diodes

2. Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

3. Blue‐green injection lasers containing pseudomorphic Zn1−xMgxSySe1−ycladding layers and operating up to 394 K

4. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy

5. Molecular beam epitaxial growth of low‐resistivity ZnSe films

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3. Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation;Journal of Applied Physics;2010-05-15

4. In-situ X-ray diffraction during epitaxial growth of ZnSe-based heterostructures on (001)GaAs;physica status solidi (c);2007-09

5. Growth of strained ZnSe layers on GaAs substrates by pulsed laser deposition carried out in an off-axis deposition geometry;Thin Solid Films;2007-07

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