Reaction models for the homoepitaxial and selected area growth of GaSb by MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
2. A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
3. Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As
4. Surface chemical processes in metal organic molecular‐beam epitaxy; Ga deposition from triethylgallium on GaAs(100)
5. Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100)
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1. Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process;Journal of Crystal Growth;2008-11
2. Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films;Surface and Coatings Technology;2007-09
3. Deposition of GaSb Films from the Single-Source Precursor [t-Bu2GaSbEt2]2;Chemistry of Materials;2005-03-22
4. Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition;Applied Physics Letters;2000-08-07
5. Design of the OMVPE Process;Organometallic Vapor-Phase Epitaxy;1999
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