Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures-Reference-Cited by-同舟云学术

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Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures

Published:1998-06 Issue: Volume:189-190 Page:753-757
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Buyanov A.V.,Bergman J.P.,Sandberg J.A.,Sernelius B.E.,Holtz P.O.,Dalfors J.,Monemar B.,Amano H.,Akasaki I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures, Paris, Les Editions de Physique, 1992.

2. High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition

3. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

4. Photoluminescence related to the two‐dimensional electron gas at a GaN/AlGaN heterointerface

5. Weakly localized transport in modulation-doped GaN/AlGaN heterostructures

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1. Transient decay of photoinduced current in semiconductors and heterostructures;Journal of Physics D: Applied Physics;2019-10-24

2. Time-Resolved Photocurrent Spectroscopic Diagnostics of Electrically Active Defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure Grown on Si Wafers;Journal of Nanoscience and Nanotechnology;2016-07-01

3. Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures;Journal of Applied Physics;2015-10-28

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