GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy
2. Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells
3. Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator
4. Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators
5. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observation of self-organized superlattice in AlGaInAsSb pentanary alloys;Applied Physics Letters;2003-06-02
2. Inclusion of Strain Effect in Miscibility Gap Calculations for III–V Semiconductors;Japanese Journal of Applied Physics;2000-10-15
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