Analysis of sublimation growth of bulk SiC crystals in tantalum container-Reference-Cited by-同舟云学术

Analysis of sublimation growth of bulk SiC crystals in tantalum container

Published:2000-04 Issue:1-4 Volume:211 Page:347-351
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Karpov S.Yu,Kulik A.V,Zhmakin I.A,Makarov Yu.N,Mokhov E.N,Ramm M.G,Ramm M.S,Roenkov A.D,Vodakov Yu.A

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Optimization of sublimation growth of SiC bulk crystals using modeling

2. Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

3. D. Hoffman, S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, Abstracts of E-MRS Spring Meeting (1996) A-16.

4. Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

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