Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis
2. Growth dynamics of by MBE
3. Modulated molecular beam study of group III desorption during growth by MBE
4. Detection and reduction of indium segregation during molecular-beam epitaxial growth of InGaAs/GaAs using in situ reflection mass spectrometry
5. Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE
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4. Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates;Nanoscale;2020
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