Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
2. High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
3. Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
4. Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping
5. Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography
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1. Impact of germanium co-doping on oxygen precipitation in heavily boron-doped Czochralski silicon;Superlattices and Microstructures;2016-11
2. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01
3. Role of Impurities in Solar Silicon;Advanced Silicon Materials for Photovoltaic Applications;2012-06-13
4. Effect of Ge doping on the kinetics of iron–boron pair association and dissociation in photovoltaic silicon;Journal of Crystal Growth;2012-06
5. Ge-vacancy complexes in Ge-doped czochralski silicon crystal;Acta Physica Sinica;2012
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