Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. High-mobility Si and Ge structures
2. The n-channel SiGe/Si modulation-doped field-effect transistor
3. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
4. Strain-controlled Si-Ge modulation-doped FET with ultrahigh hole mobility
5. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2008-06-13
2. Formation of polycrystalline-silicon-germanium films by pulsed laser-induced rapid annealing;SPIE Proceedings;2004-10-08
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