V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction
2. Surface diffusion and adatom stoichiometry in GaAs MBE studied by microprobe-RHEED/SEM MBE
3. Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy
4. Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy
5. Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy
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