Effects of plasma on the formation of bulk nanoscale structures with lateral dimensions on the surface of GaAs

Abstract

Abstract In this work, the effect of plasma on the formation of bulk nanoscale structures with lateral dimensions on the GaAs surface was studied. The relative change in the area of the bulk structures in different crystallographic directions is demonstrated, in comparing the before and after the operations of modification and profiling with a successive change in the etching time from 0.5 to 2 minutes. The obtained data in the course of the study showed that when applying this technology for producing nanoscale structures, it is necessary to take into account a number of parameters, such as the crystallographic direction of the substrate, the etching time, and the formation voltage of oxide nanostructures.