Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors

Published:2003-04 Issue:1-4 Volume:251 Page:848-851
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rajavel R.D.,Hussain T.,Montes M.C.,Sawins M.W.,Thomas S.,Chow D.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. D. Streit, R. Lai, A. Oki, A. Gutierrez-Aitken, Proceedings of the 2002 International Conference on InP and Related Materials, Stockholm, Sweden, 12–16 May 2002.

2. C.R. Bolognesi, M.W. Dvorak, O.J. Pitts, N. Matine, S.P. Watkins, Proceedings of the 2001 International Conference On InP and Related Materials, Nara, Japan, 14–18 May 2001.

3. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

4. Molecular-beam epitaxy growth and characterization of high quality GaAsSb

5. P. Bove, H. Lahreche, R. Langer, Proceedings of the 2002 International Conference on InP and Related Materials, Stockholm, Sweden, 12–16 May 2002.

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