Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence-Reference-Cited by-同舟云学术

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Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence

Published:2003-04 Issue:1-4 Volume:251 Page:476-480
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dimakis E.,Georgakilas A.,Androulidaki M.,Tsagaraki K.,Kittler G.,Kalaitzakis F.,Cengher D.,Bellet-Amalric E.,Jalabert D.,Pelekanos N.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Effects of macroscopic polarization in III-V nitride multiple quantum wells

2. Piezoelectric effects in semiconductor heterostructures: applications and consequences

3. Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

4. High optical quality AlInGaN by metalorganic chemical vapor deposition

5. Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting Devices

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1. Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets;Nanomaterials;2022-11-03

2. Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique;Optical Materials;2022-04

3. Non-polar GaN/AlGaN quantum-well polariton laser at room temperature;Physical Review B;2021-09-24

4. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices;Superlattices and Microstructures;2016-07

5. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2015-09-28

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