Nitrogen incorporation into GaAs(N), Al0.3Ga0.7As(N) and In0.15Ga0.85As(N) by chemical beam epitaxy (CBE) using 1,1-dimethylhydrazine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
3. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
4. Theory of the electronic structure of Ga1-yInyNxAs1−xand related alloys
5. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
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1. Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes;Journal of Alloys and Compounds;2015-11
2. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy;Journal of Applied Physics;2015-01-28
3. Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy;Journal of Crystal Growth;2013-10
4. GaAs1−xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy;Journal of Crystal Growth;2008-03
5. Electrical properties of GaAsN film grown by chemical beam epitaxy;Physica B: Condensed Matter;2007-12
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