Dopant distribution in selectively regrown InP:Fe studied by time-resolved photoluminescence-Reference-Cited by-同舟云学术

Dopant distribution in selectively regrown InP:Fe studied by time-resolved photoluminescence

Published:2001-08 Issue:4 Volume:226 Page:451-457
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gaarder A,Marcinkevičius S,Messmer E.Rodrı́guez,Lourdudoss S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Hydride vapor phase epitaxy revisited

2. R. Göbel, H. Janning, H. Burkhard, Proceedings of the 9th International Conference on InP and Related Materials, Hyanis, MA, USA, 55, IEEE, Piscataway, 1997.

3. Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy

4. Carrier trapping due to Fe3+/ Fe2+ in epitaxial InP

5. Physical Properties of III–V Semiconductor Compounds;Adachi,1992

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4. Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers;Physica E: Low-dimensional Systems and Nanostructures;2003-06

5. Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP:Fe and GaAs:Fe;Semiconductor Science and Technology;2002-01-11