Synchrotron X-ray topography of undoped VCz GaAs crystals-Reference-Cited by-同舟云学术

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Synchrotron X-ray topography of undoped VCz GaAs crystals

Published:2002-04 Issue: Volume:237-239 Page:350-355
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tuomi T.,Knuuttila L.,Riikonen J.,McNally P.J.,Chen W.-M.,Kanatharana J.,Neubert M.,Rudolph P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Compound Semiconductor 5–7 (1999–2001).

2. Bulk growth of GaAs An overview

3. AXT — VGF excellence of III–V semiconductors

4. FREIBERGER moves VGF process into production, in: Freiberger News No.11, 1999.

5. T. Kawase, H. Yoshida, T. Sakurada, Y. Hagi, K. Kaminaka, H. Miyajima, S. Kawaraba-yashi, N. Toyoda, M. Kiyama, S. Sawada, R. Nakai in: Digest of GaAs MANTECH 1999, USA.

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