Author:
Katayama-Yoshida H.,Kato R.,Yamamoto T.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. H. Katayama-Yoshida, et al., Applied to Japanese Patent (Fabrication method of low resistivity the P-type GaN:JP H8-258054 [Published in JP H10-101496]).
2. Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method
3. A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations
4. T. Yamamoto, H. Katayama-Yoshida, in: C.R. Abernathy, H. Amano, J.C. Zolper (Eds.), Gallium Nitride and Related Materials II, Pittsburgh, Pennsylvania, 1997, Materials Research Society Proceedings, Vol. 468, p. 105.
5. T. Yamamoto, H. Katayama-Yoshida, Proceedings of the Second International Conference Nitride Semiconductors, Tokushima, 1997, p. 272, J. Crystal Growth 189/190 (1998) 532.
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