Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Defect Control in Semiconductors;Hasebe,1990
2. The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growth
3. The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals
4. Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
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