Nonlinear increase in silicon epitaxial growth rate in a SiHCl3H2 system under atmospheric pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Kinetics of coverage‐dependent adsorption
2. Theoretical and simulation studies of recombinative temperature programmed desorption
3. Monte Carlo simulations of temperature programmed desorption spectra
4. The role of surface reactions in monosilane pyrolysis
5. An Approach for Modeling Surface Reaction Kinetics in Chemical Vapor Deposition Processes
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