Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Hole Compensation Mechanism of P-Type GaN Films
4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
5. Characterization of GaN epitaxial layers using
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