Structural analysis of buried conducting CoSi2 layers formed in Si by high-dose Co ion implantation-Reference-Cited by-同舟云学术

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Structural analysis of buried conducting CoSi2 layers formed in Si by high-dose Co ion implantation

Published:1998-05 Issue:3-4 Volume:187 Page:435-443
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Galayev A.A,Parkhomenko Yu.N,Chtcherbatchev K.D,Podgorny D.A,Belogorohov A.I,Diéguez A,Romano-Rodriguez A,Pérez-Rodrı́guez A,Morante J.R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Synthesis of Buried Silicon Compounds Using Ion Implantation

2. Formation of continuous CoSi2layers by high Co dose implantation into Si(100)

3. Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon

4. Microstructure of buried CoSi2 layers formed by high‐dose Co implantation into (100) and (111) Si substrates

5. Formation of epitaxial Si/CoSi2/Si(100) heterostructures using allotaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface and interface reactions of catalysts for carbon nanotube growth on Si substrates studied by soft X-ray photoelectron spectroscopy;Physica E: Low-dimensional Systems and Nanostructures;2004-08

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