Carbon and silicon doping in GaAs and AlAs grown on (3 1 1)-oriented GaAs substrates by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. The influence of aluminum composition of AlxGa1–xAs in distributed Bragg reflector on surface morphology;physica status solidi (b);2004-10
3. GaAs∕AlGaAs nanowires capped with AlGaAs layers on GaAs(311)B substrates;Applied Physics Letters;2004-09-06
4. High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication;Applied Physics Letters;2004-05-03
5. Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition;Journal of Crystal Growth;2000-12
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