MBE grown 2.0μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m
2. Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
3. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
4. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
5. GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power
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3. High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Divergence;Chinese Physics Letters;2017-08
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