Fabrication of quantum wires by in-situ ion etching and MBE overgrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Ballistic transport in GaAs quantum wires—A short history
2. Low-dimensional quantum devices
3. Quantum Dot Heterostructures;Bimberg,1999
4. Confinement potential and surface state density in deep-mesa etched quantum wires
5. Characterization of in situ etched and molecular beam epitaxy regrown GaAs interfaces using capacitance–voltage measurements, far infrared spectroscopy, and magnetotransport measurements
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1. Revisiting the problem of a single electron cylindrical quantum dot in constant magnetic field;Physica E: Low-dimensional Systems and Nanostructures;2010-03
2. Boundary element—dual reciprocity formulation for bound electron states in semiconductor quantum wires;Computer Physics Communications;2008-03
3. DRM-MD approach for bound electron states in semiconductor nano-wires;WIT Transactions on Modelling and Simulation, Vol 44;2007-05-29
4. Surface pattern evolution during thermal Cl2 etching of GaAs(001);Applied Physics Letters;2003-06-23
5. Electronic properties of etched–regrown heterostructure interfaces;Journal of Crystal Growth;2003-04
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